1 (module Transistor_TO92_EBC_254 (layer F.Cu) (tedit 5298DD9D)
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2 (descr "Transistor, TO92, 2.54mm lead spacing")
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4 (fp_text reference REF* (at -1.905 2.54) (layer F.SilkS)
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5 (effects (font (size 1.016 1.016) (thickness 0.2032)))
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7 (fp_text value VAL* (at 1.905 2.54) (layer F.SilkS)
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8 (effects (font (size 1.016 0.9144) (thickness 0.2032) italic))
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10 (fp_line (start 2.413 0) (end 2.413 1.651) (layer F.SilkS) (width 0.254))
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11 (fp_line (start -2.413 1.651) (end -2.413 0) (layer F.SilkS) (width 0.254))
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12 (fp_arc (start 0 0) (end 0 -2.413) (angle 90) (layer F.SilkS) (width 0.254))
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13 (fp_arc (start 0 0) (end -2.413 0) (angle 90) (layer F.SilkS) (width 0.254))
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14 (fp_line (start -2.413 1.651) (end 2.413 1.651) (layer F.SilkS) (width 0.254))
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15 (pad 1 thru_hole rect (at -2.54 0) (size 1.397 1.397) (drill 0.8128) (layers *.Cu *.Mask F.SilkS))
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16 (pad 2 thru_hole circle (at 0 0) (size 1.397 1.397) (drill 0.8128) (layers *.Cu *.Mask F.SilkS))
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17 (pad 3 thru_hole circle (at 2.54 0) (size 1.397 1.397) (drill 0.8128) (layers *.Cu *.Mask F.SilkS))
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18 (model discret/to98.wrl
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21 (rotate (xyz 0 0 0))
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